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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION *High DC Current Gain : hFE= 1000(Min.)@ IC= 20A *Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) APPLICATIONS *Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 100 100 5 30 5 150 UNIT .cn mi e V V V A A IC Collector Current-Continuous IB B Base Current- Continuous PC Collector Power Dissipation @TC=25 W Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 VECF fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current DC Current Gain DC Current Gain C-E Diode Forward Voltage CONDITIONS IC= 50mA, IB= 0 IC= 20A, IB= 0.2A IC= 20A, IB= 0.2A VCB= 100V, IE= 0 VEB= 5V, IC= 0 MIN 100 2SD1525 TYP. MAX UNIT V 1.5 2.5 0.1 10 1000 200 V V mA mA Current-Gain--Bandwidth Product Output Capacitance Switching Times w w w. .cn mi cse is IC= 20A; VCE= 5V IC= 30A; VCE= 5V IF= 10A IC= 1A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz IB1 = -IB2= 10mA; VCC= 50V; RL= 10 3.0 10 500 V MHz pF ton tstg tf Turn-On Time Storage Time Fall Time 1.5 10 1.5 s s s isc Websitewww.iscsemi.cn |
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