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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage CHA IN Collector current Collector dissipation Collector-emitter voltage ES NG TC=25ae Open emitter Open base MIC E CONDITIONS OND TOR UC MAX 850 500 7 15 80 150 -55~150 UNIT V V V A W ae ae Emitter-base voltage Open collector Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC3949 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE= 500 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 850 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A VCE=800V; IE=0 TC=100ae VEB=6V ;IC=0 1.5 0.1 1.0 0.1 V ICBO Collector cut-off current mA IEBO Emitter cut-off current hFE fT DC current gain Transition frequency IC=10A ; VCE=5V COB CHA IN Output capacitance E SEM NG IC=2A ; VCE=10V OND IC 10 TOR UC 30 20 260 mA MHz IE=0 ; VCB=10V;f=1MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3949 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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