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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3942 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) *Good Linearity of hFE *Low Saturation Voltage APPLICATIONS *Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 300 V 300 V 7 V 0.1 A 0.2 A 10 W 2 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3942 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A; IE= 0 IC= 1mA; IB= 0 B 300 V V(BR)CEO Collector-Emitter Breakdown Voltage 300 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10A ; IC= 0 7 V VCE(sat) VBE(on) ICEO Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA IC= 30mA ; VCE= 10V VCE= 200V; IB= 0 1.5 V Base-Emitter On Voltage 1.2 V A Collector Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance w ww scs .i IC= 5mA; VCE= 50V IC= 20mA; VCE= 30V IE= 0; VCB= 30V, ftest= 1MHz .cn mi e 50 70 10 250 MHz 2.7 pF isc Websitewww.iscsemi.cn 2 |
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