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| STE30NK90Z N-channel 900V - 0.21 - 28A ISOTOP Zener-Protected SuperMESHTM MOSFET General features Type STE30NK90Z VDSS 900V RDS(on) <0.26 ID 28A Pw 500W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized iSOTOP Description The SuperFREDMeshTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Internal schematic diagram Applications Switching application Order codes Part number STE30NK90Z Marking E30NK90Z Package ISOTOP Packaging TUBE July 2006 Rev 5 1/13 www.st.com 13 Contents STE30NK90Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STE30NK90Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM(1) Ptot Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Value 900 900 30 28 18 112 500 4.3 6.5 4.5 2500 Unit V V V A A A W W/C KV V/ns V VESD(G-S) dv/dt (2) VISO Tstg Tj Gate source ESD(HBM-C=100pF, R=1.5KW) Peak diode recovery voltage slope Insulation withstand voltage (AC-RMS) from all four terminals to external heatsink Storage temperature -65 to 150 Max. operating junction temperature C 1. Pulse width limited by safe operating area. 2. ISD 28A, di/dt 200A/s, VDD V(BR)DSS, Table 2. Rthj-amb Thermal data 0.23 40 C/W C/W Thermal resistance junction-ambient max Rthj-case Thermal resistance junction-case max Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 35 V) Max Value 13 500 Unit A mJ 3/13 Electrical characteristics STE30NK90Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 150 A VGS = 10V, ID = 14 A 3 3.75 0.21 Min. 900 10 100 100 4.5 0.26 Typ. Max. Unit V A A A V IDSS IGSS VGS(th) RDS(on) Table 5. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance output capacitance reverse transfer capacitance Equivalent output capacitance Turn-on delay time rise time turn-off delay time fall time Total gate charge gate-source charge gate-drain charge Test conditions VDS = 15 V, ID = 14 A Min. Typ. 26 12000 852 166 377 67 59 250 72 350 51 190 490 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 720 V VDD = 450 V, ID = 13 A RG = 4.7 VGS = 10 V (see Figure 14) VDD = 720 V, ID = 26 A, VGS = 10V (see Figure 15) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/13 STE30NK90Z Table 6. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 28 A, VGS = 0 1 18.9 36.6 1.33 25.2 37.8 Test conditions Min. Typ. Max. 28 112 2 Unit A A V s C A s C A Reverse recovery time ISD = 26 A, di/dt = 100 A/s Reverse recovery charge VDD = 100 V, Tj = 25C Reverse recovery current (see Figure 16) Reverse recovery time ISD = 26 A, di/dt = 100 A/s Reverse recovery charge VDD = 100 V, Tj = 150C Reverse recovery current (see Figure 16) 1. Pulse width limited by safe operating area% 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 Table 7. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. Unit V Gate-source breakdown Igs= 1mA (Open voltage Drain) 2.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/13 Electrical characteristics STE30NK90Z 2.2 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STE30NK90Z Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/13 Electrical characteristics Figure 13. Avalanche energy vs starting Tj STE30NK90Z 8/13 STE30NK90Z Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data STE30NK90Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STE30NK90Z Package mechanical data ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G O B A N D E F J K L M H C 11/13 Revision history STE30NK90Z 5 Revision history Table 8. Date 24-May-2005 10-Jun-2005 28-Sep-2005 14-Oct-2005 12-Jul-2006 Revision history Revision 1 2 3 4 5 First Release Inserted new row in Table 6.: Switching times Complete version Modified Figure 3, Figure 6 New template, no content change Changes 12/13 STE30NK90Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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