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| SMD Type 100V Dual N-Channel PowerTrench MOSFET KDS3912 IC IC Features 3 A, 100 V. RDS(ON) = 125m RDS(ON) = 135m Low gate charge (14 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability @ VGS = 10 V @ VGS = 6 V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Case (Note 1) Thermal Resistance Junction to Ambient (Note 1a) TJ, TSTG R R JC JA Symbol VDSS VGS ID PD Rating 100 20 3 20 1.6 1 Unit V V A A W PD 0.9 0.9 -55 to 175 40 78 W /W /W www.kexin.com.cn 1 SMD Type KDS3912 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol WDSS IAR BVDSS Testconditons Single Pulse,VDD=50V,ID=3A(Not 2) ( Not 2) VGS = 0 V, ID = 250 ID = 250 A 100 108 10 100 -100 2 2.5 -6 92 98 175 10 11 632 VDS = 50 V, VGS = 0 V,f = 1.0 MHz 40 20 8.5 VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN = 6 2 23 4.5 14 VDS = 50 V, ID = 3 A,VGS = 10 V (Note 2) 2.4 3.8 1.3 VGS = 0 V, IS = 1.3 A (Not 2) IF = 3A diF/dt = 100 A/ s (Not 2) 0.76 30 106 1.2 17 4 37 9 20 125 135 250 4 Min Typ Max 90 3.0 IC IC Unit mJ A V mV/ A nA nA V mV/ A, Referenced to 25 VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 A A, Referenced to 25 VGS = 10 V, ID = 3 A Static Drain-Source On-Resistance RDS(on) VGS = 6 V, ID = 2.8 A VGS = 10 V, ID =3 A,TJ = 125 On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr VGS = 10 V, VDS = 10V VDS = 10 V, ID = 3A m A S pF pF pF ns ns ns ns nC nC nC A V nS nC 2 www.kexin.com.cn |
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