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| SB 1XX - 1.3 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 operation junction temperature * reverse avalanche behavior Mechanical Data: SB 1XX passivated Silicon Chip Demension(mm) 1,3x1,3 Thickness: 350 +- 20 m Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 1A Reverse Voltage (V):23, 43, 100 V Type SB120 SB140 SB1100 Chip size(mm) VR(V) VF(V)@25 C at If=1A IRM@VRMM at 25 C 1,3x1,3 1,3x1,3 1,3x1,3 23 V 43 V 100 V 380mV 400mV 650mV 0,5mA 0,5mA 0,5mA Note: Other voltages, Vf & Top Metal AL are available |
Price & Availability of SB120-13
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