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| FDP8440 N-Channel PowerTrench(R) MOSFET January 2009 FDP8440 N-Channel PowerTrench(R) MOSFET 40V, 277A, 2.2m Features * RDS(on) = 1.64m (Typ.)@ VGS = 10V, ID = 80A * Qg(tot) = 345nC (Typ.)@ VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * RoHS Compliant tm Application * Automotive Engine Control * Powertrain Management * Motors, Solenoids * Electronic Steering * Integrated Starter/ Alternator * Distributed Power Architectures and VRMs * Primary Switch for 12V Systems D GDS TO-220 FDP Series G S MOSFET Maximum Ratings T Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG TL Drain Current Drain to Source Voltage Gate to Source Voltage Drain Current C = 25oC unless otherwise noted Parameter Ratings 40 20 Units V V A A mJ W W/oC o - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (TC = 25oC) - Derate above 25 oC 277* 196* 100 (Note 1) (Note 2) 500 1682 306 2.04 -55 to +175 300 Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C oC *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. Thermal Characteristics RJC RCS RJA Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink (Typ.) Thermal Resistance, Junction to Ambient 0.49 0.5 62.5 o C/W C/W oC/W o (c)2009 Fairchild Semiconductor Corporation FDP8440 Rev. A6 1 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information Device Marking FDP8440 Device FDP8440 Package TO-220 TC = 25C unless otherwise noted Reel Size N/A Tape Width N/A Quantity 50units Electrical Characteristics Symbol Off Characteristics BVDSS IDSS IGSS VGS(th) RDS(on) Parameter Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current Gate to Source Threshold Voltage Static Drain-Source On-Resistance Conditions VGS = 0V, ID = 250A VDS = 32V VGS = 0V VGS = 20V VDS = VGS, ID = 250A VGS = 4.5V, ID = 80A VGS = 10V, ID = 80A VGS = 10V, ID = 80A, TC = 175oC TC = 150 C o Min 40 ---1 ---- Typ -----1.88 1.64 3.00 Max -1 250 100 3 2.4 2.2 4.4 Units V A A nA V On Characteristics m Dynamic Characteristics Ciss Coss Crss RG Qg(tot) Qg(2) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge (VGS = 10V) -VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 20V ID = 80A Ig = 1.0mA --------- 18600 1840 1400 1.1 345 32.5 49 16.5 74 24740 2450 2100 -450 ----- pF pF pF nC nC nC nC nC Switching Characteristics tON td(on) tr td(off) tf tOFF Turn-On Time -VDD = 20V,ID = 80A VGS = 10V, RGEN = 7 -----ISD = 80A ISD = 40A ISD = 75A, dISD/dt = 100A/s ISD = 75A, dISD/dt = 100A/s ----- 175 43 130 435 290 730 --59 77 360 95 275 875 590 1470 1.25 1.0 --- ns ns ns ns ns ns V V ns nC Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristics and Maximum Ratings VSD trr QRR NOTES: 1: Pulse width limited by maximum junction temperature. 2: Starting TJ = 25C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V. Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge FDP8440 Rev. A6 2 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 400 Figure 2. Transfer Characteristics 400 100 ID,Drain Current[A] VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V * Notes : 1. 250s Pulse Test 2. TC = 25 C o 100 ID,Drain Current[A] o 150 C -55 C o 10 10 25 C * Notes : 1. VDS = 20V 2. 250s Pulse Test o 1 0.4 0.04 0.1 VDS,Drain-Source Voltage[V] 1 1 0 2 4 VGS,Gate-Source Voltage[V] 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.80 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1000 RDS(ON) [m], Drain-Source On-Resistance 1.76 VGS = 4.5V IS, Reverse Drain Current [A] 100 150 C o o 25 C 1.72 VGS = 10V 10 Notes: 1. VGS = 0V 2. 250s Pulse Test * Note : TJ = 25 C o 1.68 0 50 100 150 ID, Drain Current [A] 200 250 1 0.3 0.6 0.9 VSD, Body Diode Forward Voltage [V] 1.2 Figure 5. Capacitance Characteristics 30000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 25V VDS = 20V VDS = 15V 24000 Capacitances [pF] Ciss 8 18000 * Note: 1. VGS = 0V 2. f = 1MHz 6 12000 Coss 4 6000 Crss 2 * Note : ID = 80A 0 -1 10 10 VDS, Drain-Source Voltage [V] 0 10 1 20 0 0 100 200 300 Qg, Total Gate Charge [nC] 400 FDP8440 Rev. A6 3 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage rDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 2.5 1.1 2.0 1.5 1.0 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250A 0.5 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.0 -100 * Notes : 1. VGS = 10V 2. ID = 80A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Unclamped Inductive Switching Capability 200 100 IAS, AVALANCHE CURRENT(A) TJ = 25 C o o Figure 10. Safe Operating Area 3000 1000 ID, Drain Current [A] 100s 100 TJ = 150 C 10 10 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 1ms 10ms 100ms 1 1 0.01 0.1 1 10 100 1000 10000 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZJC] 0.5 0.1 0.2 0.1 0.05 PDM t1 t2 o 0.01 0.02 0.01 Single pulse * Notes : 1. ZJC(t) = 0.49 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 0.001 -5 10 10 -4 10 10 Rectangular Pulse Duration [sec] -3 -2 10 -1 10 0 FDP8440 Rev. A6 4 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP8440 Rev. A6 5 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP8440 Rev. A6 6 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions TO-220 FDP8440 Rev. A6 7 www.fairchildsemi.com FDP8440 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM tm FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDP8440 Rev. A6 8 www.fairchildsemi.com |
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