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 CAT6219
500mA CMOS LDO Regulator
FEATURES
Guaranteed 500mA peak output current Low dropout voltage of 300mV typical at 500mA Stable with ceramic output capacitor External 10nF bypass capacitor for low noise Quick-start feature Under voltage lockout No-load ground current of 55A typical Full-load ground current of 85A typical 1.0% initial accuracy (VOUT 2.0V) 2.0% accuracy over temperature (VOUT 2.0V) "Zero" current shutdown mode Current limit and thermal protection 5-lead TSOT-23 and 6-pad TDFN packages
DESCRIPTION
The CAT6219 is a 500mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. The quick-start feature allows the use of an external bypass capacitor to reduce the overall output noise without affecting the turn-on time of just 150s. With zero shutdown current and low ground current of 55A typical, the CAT6219 is ideal for batteryoperated devices with supply voltages from 2.3V to 5.5V. An internal under voltage lockout circuit disables the output at supply voltages under 2.15V typical. The CAT6219 offers 1% initial accuracy and low dropout voltage, 300mV typical at 500mA. Stable operation is provided with a small value ceramic capacitor, reducing required board space and component cost. Other features include current limit and thermal protection. The LDO is available in fixed and adjustable output in the low profile (1mm max height) 5-lead TSOT23 and in the 6-pad 2mm x 2mm TDFN packages.
APPLICATIONS
Cellular phones Battery-powered devices Consumer Electronics
For Ordering Information details, see page 9.
PIN CONFIGURATION
5-Lead TSOT-23
(1mm height)
TYPICAL APPLICATION CIRCUIT
6-Pad TDFN
(2mm x 2mm)
VIN 2.3V to 5.5V OFF ON
CIN 1F
VIN
VOUT
VOUT COUT 2.2F
CAT6219 EN GND BYP
VIN 1 GND 2 EN 3
Top View
5 VOUT CAT6219 4 BYP/ADJ
EN GND VIN
1 2 3
6 5 4
BYP/ADJ NC VOUT
CBYP (Optional) 10nF
Top View
(c) Catalyst Semiconductor, Inc. Characteristics subject to change without notice
1
Doc. No. MD-10009 Rev. D
CAT6219 PIN DESCRIPTIONS
Pin # Name Function 1 VIN Supply voltage input. 2 GND Ground reference. Enable input (active high); a 2.5M 3 EN pull-down resistor is provided. Optional bypass capacitor connection for 4 BYP noise reduction and PSRR enhancing. Adjustable input. Feedback pin 4 ADJ connected to resistor divider. 5 VOUT LDO Output Voltage.
VIN 2.3V to 5.5V OFF ON CIN 1F VIN VOUT COUT 2.2F R1 VOUT
CAT6219 EN GND ADJ
R2
VOUT = 1.24V
(1
R1 + R2
)
Figure 1. Adjustable Output LDO
PIN FUNCTION
VIN is the supply pin for the LDO. A small 1F ceramic bypass capacitor is required between the VIN pin and ground near the device. When using longer connections to the power supply, CIN value can be increased without limit. The operating input voltage range is from 2.3V to 5.5V. EN is the enable control logic (active high) for the regulator output. It has a 2.5M pull-down resistor, which assures that if EN pin is left open, the circuit is disabled. VOUT is the LDO regulator output. A small 2.2F ceramic bypass capacitor is required between the VOUT pin and ground. For better transient response, its value can be increased to 4.7F. The capacitor should be located near the device. For the SOT23-5 package, a continuous 500mA output current may turn-on the thermal protection. A 250 internal shutdown switch discharges the output capacitor in the no-load condition. GND is the ground reference for the LDO. The pin must be connected to the ground plane on the PCB. BYP is the reference bypass pin. An optional 0.01F capacitor can be connected between BYP pin and GND to reduce the output noise and enhance the PSRR at high frequency. ADJ is the adjustable input pin for the adjustable LDO. The pin is connected to the resistor voltage divider.
ABSOLUTE MAXIMUM RATINGS (1)
Parameter VIN VEN, VOUT Junction Temperature, TJ Power Dissipation, PD Storage Temperature Range, TS Lead Temperature (soldering, 5 sec.) ESD Rating (Human Body Model) Rating 0 to 6.5 -0.3 to VIN+0.3 +150 Internally Limited -65 to +150 260 3
(2)
Unit V V C mW C C kV
RECOMMENDED OPERATING CONDITIONS (3)
Parameter VIN VEN Junction Temperature Range, TJ Package Thermal Resistance (SOT23-5), JA Range 2.3 to 5.5 0 to VIN -40 to +125 235 Unit V V C C/W
Typical application circuit with external components is shown on page 1.
Notes: (1) Exceeding maximum rating may damage the device. (2) The maximum allowable power dissipation at any TA (ambient temperature) is PDmax = (TJmax - TA) / JA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. (3) The device is not guaranteed to work outside its operating rating.
Doc. No. MD-10009 Rev. D
2
(c) Catalyst Semiconductor, Inc. Characteristics subject to change without notice
CAT6219 ELECTRICAL OPERATING CHARACTERISTICS
(1)
VIN = VOUT + 1.0V, VEN = High, IOUT = 100A, CIN = 1F, COUT = 2.2F, ambient temperature of 25C (over recommended operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range. Symbol Parameter VOUT-ACC Output Voltage Accuracy TCOUT VR-LINE VR-LOAD VDROP Output Voltage Temp. Coefficient Line Regulation Load Regulation Dropout Voltage (2) VIN = VOUT + 1.0V to 5.5V IOUT = 100A to 500 mA IOUT = 500mA IOUT = 0A IOUT = 500mA IGND-SD PSRR ISC TON eN REN ESR VADJ Shutdown Ground Current Power Supply Rejection Ratio Output short circuit current limit Turn-On Time Output Noise Voltage
(3)
Conditions Initial accuracy for VOUT 2.0V (4)
Min -1.0 -2.0
Typ
Max +1.0 +2.0
Unit % ppm/C
40 -0.2 -0.4 1 300 55 85 1 2 64 54 600 800 150 45 250 2.5 2.15 5 IOUT = 100A VIN = 2.3 to 5.5V 1.2 1.8 1.6 0.4 0.15 1.5 160 10 1 4 1.24 500 1.27 0.1 +0.2 +0.4 1.5 2 400 500 75 90
%/V % mV
IGND
Ground Current
A
VEN < 0.4V f = 1kHz, CBYP = 10nF f = 20kHz, CBYP = 10nF VOUT = 0V CBYP = 10nF BW = 10Hz to 100kHz
A dB mA s Vrms M V m V
ROUT-SH Shutdown Switch Resistance Enable pull-down resistor COUT equivalent series resistance Adjustable input voltage VIN-UVLO Under voltage lockout threshold
Enable Input VHI VLO IEN Logic High Level Logic Low Level Enable Input Current VIN = 2.3 to 5.5V, 0C to +125C junction temperature VIN = 2.3 to 5.5V VEN = 0.4V VEN = VIN V V A
Thermal Protection TSD THYS Thermal Shutdown Thermal Hysteresis C C
Notes: (1) Specification for 2.85V output version unless specified otherwise. (2) (3) (4) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. During test, the input voltage stays always above the minimum 2.3V. Specification for 1.8V output version. For VOUT < 2.0V, the initial accuracy is 2% and across temperature 3%. 3
Doc. No. MD-10009 Rev. D
(c) Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT6219 TYPICAL CHARACTERISTICS (shown for 2.85V output version)
VIN = 3.85V, IOUT = 100A, CIN = 1F, COUT = 2.2F, CBYP = 10nF, TA = 25C unless otherwise specified. Dropout Characteristics
3.0
Line Regulation
2.87
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
2.5 2.0 1.5 1.0 0.5 0.0
0.1mA 500mA
2.86 2.85 2.84 2.83 2.82 2.5 3 3.5 4 4.5 5 5.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Load Regulation
2.95
2.87
Output Voltage vs. Temperature
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
0 50 100 150 200 250 300 350 400 450 500
2.90
2.86 2.85 2.84 2.83 2.82 -40 -20 0 20 40 60 80 100 120 140
2.85
2.80
2.75
OUTPUT LOAD CURRENT (mA)
TEMPERATURE (C)
Ground Current vs. Load Current
100
65
Ground Current vs. Temperature
GROUND CURRENT (A)
GROUND CURRENT (A)
90 80 70 60 50 0 50 100 150 200 250 300 350 400 450 500
61 57 53 49 45 -40 -20 0 20 40 60 80 100 120 140
OUTPUT LOAD CURRENT (mA)
TEMPERATURE (C)
Doc. No. MD-10009 Rev. D
4
(c) Catalyst Semiconductor, Inc. Characteristics subject to change without notice
CAT6219 TYPICAL CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100A, CIN = 1F, COUT = 2.2F, CBYP = 10nF, TA = 25C unless otherwise specified.
Output Short-circuit Current vs. Input Voltage
1000
Ground Current vs. Input Voltage
70
GROUND CURRENT (A)
VOUT = 0
0 1 2 3 4 5
900
60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
CURRENT LIMIT (mA)
800 700 600 500 400 300 200 100 0
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Dropout vs. Temperature (500mA Load)
500mA DROPOUT VOLTAGE (mV)
500
400
Dropout vs. Load Current
DROPOUT VOLTAGE (mV)
-40 -20 0 20 40 60 80 100 120 140
450 400 350 300 250 200
350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 450 500
TEMPERATURE (C)
OUTPUT LOAD CURRENT (mA)
Enable Threshold vs. Input Voltage
1.6
PSRR vs. Frequency (10mA Load)
80 70
ENABLE THRESHOLD (V)
CBYP = 10nF CBYP = 0
1.2
60
PSRR [dB]
50 40 30 20 10
0.8
0.4
0 2 2.5 3 3.5 4 4.5 5 5.5
0 1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
INPUT VOLTAGE (V)
FREQUENCY [Hz]
(c) Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
5
Doc. No. MD-10009 Rev. D
CAT6219 TRANSIENT CHARACTERISTICS (shown for 2.85V output option) VIN = 3.85V, IOUT = 100A, CIN = 1F, COUT = 2.2F, CBYP = 10nF, TA = 25C unless otherwise specified.
Enable Turn-On (100A Load) Enable Turn-Off (100A Load)
Enable Turn-On (500mA Load)
Enable Turn-Off (500mA Load)
Line Transient Response (3.85V to 4.85V)
Load Transient Response (0.1mA to 500mA)
Doc. No. MD-10009 Rev. D
6
(c) Catalyst Semiconductor, Inc. Characteristics subject to change without notice
CAT6219 PACKAGE OUTLINE DRAWINGS
TSOT-23 5-Lead (TD)
(1)(2)
D e
SYMBOL A A1 A2 b c D
E1 E
MIN 0.01 0.80 0.30 0.12
NOM 0.05 0.87 0.15 2.90 BSC 2.80 BSC 1.60 BSC 0.95 TYP
MAX 1.00 0.10 0.90 0.45 0.20
E E1 e L L1 L2 0 0.30
0.40 0.60 REF 0.25 BSC
0.50
8
TOP VIEW
A2 A
b
A1 L1
L
c
L2
SIDE VIEW
END VIEW
For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf.
Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC standard MO-193.
(c) Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
7
Doc. No. MD-10009 Rev. D
CAT6219
TDFN 6-Pad 2mm x 2mm (VP5)
(1)(2)
D
A DETAIL A DAP SIZE 1.8 x 1.2 E2 PIN#1 IDENTIFICATION
PIN# 1 INDEX AREA
A1
D2
TOP VIEW
SIDE VIEW
BOTTOM VIEW
e SYMBOL MIN NOM MAX
A A1 A3 b D D2 E E2 e L
0.70 0.00 0.25 1.90 1.50 1.90 0.90 0.15
0.75 0.02 0.20 REF 0.30 2.00 1.60 2.00 1.00 0.65 TYP 0.25
0.80 0.05 0.35 2.10 1.70 2.10 1.10 0.35
A1 FRONT VIEW A3 A b DETAIL A L
For current Tape and Reel information, download the PDF file from: http://www.catsemi.com/documents/tapeandreel.pdf.
Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC standard MO-229.
Doc. No. MD-10009 Rev. D
8
(c) Catalyst Semiconductor, Inc. Characteristics subject to change without notice
CAT6219 EXAMPLE OF ORDERING INFORMATION
Prefix
CAT
(1)
Device #
6219
Suffix
-280 TD -G T3
Company ID Product Number 6219
VOUT Voltage (4) 125: 1.25V 180: 1.80V 250: 2.50V 280: 2.80V 285: 2.85V 300: 3.00V 330: 3.30V ADJ: Adjustable
Package TD: TSOT-23 VP5: TDFN (6)
Lead Finish G: NiPdAu Tape & Reel T: Tape & Reel 3: 3,000/Reel (TSOT-23) 4: 4,000/Reel (TDFN)
Ordering Number CAT6219-125TD-GT3 CAT6219-180TD-GT3 CAT6219-250TD-GT3 CAT6219-280TD-GT3 CAT6219-285TD-GT3 (4) CAT6219-300TD-GT3 CAT6219-330TD-GT3 CAT6219-ADJTD-GT3 CAT6219-330VP5-GT4
VOUT Voltage(5) 1.25V 1.80V 2.50V 2.80V 2.85V 3.00V 3.30V 1.25V to 5V 3.30V
Package TSOT-23-5 TSOT-23-5 TSOT-23-5 TSOT-23-5 TSOT-23-5 TSOT-23-5 TSOT-23-5 TSOT-23-5 TDFN-6
Quantity per Reel 3,000 3,000 3,000 3,000 3,000 3,000 3,000 3,000 4,000
For Product Top Mark Codes, click here: http://www.catsemi.com/techsupport/producttopmark.asp
Notes: (1) All packages are RoHS-compliant (Lead-free, Halogen-free). (2) The standard lead finish is NiPdAu pre-plated (PPF) lead frames. (3) The device used in the above example is a CAT6219-280TD-GT3 (VOUT = 2.80V, in a TSOT-23 package, NiPdAu, Tape & Reel, 3,000/Reel). (4) Standard voltages are 1.80V, 2.80V and 3.30V. For other voltage options, please contact your nearest Catalyst Semiconductor Sales office. (5) All output voltage options have the same marking. (6) Contact factory for availability. (7) Package Marking for CAT6219 family is "RV.
(c) Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
9
Doc. No. MD-10009 Rev. D
CAT6219 REVISION HISTORY
Date 20-Apr-07 07-Nov-07 08-Feb-08 20-May-08 Rev. A B C D Reason Initial Release Update Package Outline Drawings Update Example of Ordering Information Add "MD-" to Document Number Update Electrical Operating Characteristics Add Adjustable and other voltage options Update Package Outline Drawing - TDFN 6-Pad Add link to Top Mark Codes
Copyrights, Trademarks and Patents (c) Catalyst Semiconductor, Inc. Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Adaptive AnalogTM, Beyond MemoryTM, DPPTM, EZDimTM, LDDTM, MiniPotTM, Quad-ModeTM and Quantum Charge ProgrammableTM Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not be complete.
Catalyst Semiconductor, Inc. Corporate Headquarters 2975 Stender Way Santa Clara, CA 95054 Phone: 408.542.1000 Fax: 408.542.1200 www.catsemi.com
Document No: MD-10009 Revision: D Issue date: 05/20/08


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