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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *Wide Area of Safe Operation *Built-in Damper Diode APPLICATIONS *Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 V 1500 V 5 V 6 A 3 A 9 A 2 W .cn mi e IB B Base Current- Continuous ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5885 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 1.5 50 1.0 5 10 V A mA ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 IC= 3A; VCE= 5V hFE DC Current Gain VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product Switching times; Resistive load tstg Storage Time tf Fall Time w w. w sem isc IF= 3A IC= 0.1A; VCE= 10V; f= 0.5MHz .cn i 2.0 V 3 MHz 5.0 s IC= 3A, IB1= 0.75A; IB2= -1.5A 0.5 s isc Websitewww.iscsemi.cn 2 |
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