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| TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES * 12 W Typical Power at 2.45 GHz * 11 dB Typical Linear Power Gain at 2.45 GHz * High Linearity: IP3 = 50 dBm Typical * High Power Added Efficiency: Nominal PAE of 40 % * Suitable for High Reliability Application * Wg = 30 mm * 100 % DC and RF Tested PHOTO ENLARGEMENT * Flange Ceramic Package DESCRIPTION The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 2.5A @ 2.45 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3 -order Intermodulation, *PSCL = 28 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 rd CONDITIONS Output Power at 1dB Gain Compression Point MIN 39.5 10 TYP 41 11 50 40 7.5 5400 -1.7 22 1.5 MAX UNIT dBm dB dBm % A mS Volts Volts C/W * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2996D REV2_20070503 ABSOLUTE MAXIMUM RATINGS at 25 C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 35dBm 30 W 175 C - 65 C to +175 C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2996D REV2_20070503 EVALUATION BOARD PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil -Vg Ci4, 0.1uF Ci3, 1000pF 1206 Ci5, 10uF Co6, 10uF Co5, 0.1uF 1206 +10.5 V Vd Co4, 1000pF 0805 R1, 10ohm Co2, 2.5pF RF in Ci1, 0.7pF Ci2, 1.5pF Co1, 1.5pF Co3, 1.2pF RF out 30mm FET @2.45GHz TC2996D 386-350011-001 Evaluation Board Parts List Part Type Chip Resistor Reference Designator Description R1 (0805) 105% (0603) 0.7PF 0.25PF (0603) 1.5PF 0.25PF (0603) 1000PF 10% (0603) 0.1F 20% (1206) 10F 20% (0603) 2.5PF 0.25PF (0603) 1.2PF 0.25PF Manufacturer Part Number Chip Resistor(0805)105% Murata Murata Murata Murata Murata Murata Murata GRM39COG0R7C50V GRM39COG1R5C50V GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V (GRM31CF5E106ZA01L) GRM39COG2R5C50V GRM39COG1R2C50V Chip Capacitor Ci1 Chip Capacitor Ci2, Co1 Chip Capacitor Ci3, Co4 Chip Capacitor Ci4, Co5 Chip Capacitor Ci5, Co6 Chip Capacitor Co2 Chip Capacitor Co3 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3 |
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