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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) *Complement to Type 2SB1019 APPLICATIONS *High current switching applications. *Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 70 V 50 V 5 V 7 A 1 A 2 W UNIT .cn mi e IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 4A; IB= 0.4A B 2SD1412 MIN 50 TYP. MAX UNIT V 0.4 1.2 30 50 70 240 V V A A IC= 4A; IB= 0.4A B VCB= 70V; IE= 0 VEB= 5V; IC= 0 Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w w. .cn mi cse is IC= 1A; VCE= 1V IC= 4A; VCE= 1V 30 IE= 0; VCB= 10V, ftest= 1MHz IC= 1A; VCE= 4V IB1= -IB2= 0.3A; RL= 10; VCC= 30V 250 10 pF MHz 0.2 2.5 0.5 s s s hFE classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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