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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Silicon Transistor VOLTAGE 100 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT5338ZPT CURRENT 5 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. SC-73/SOT-223 1.65+0.15 * High saturation current capability. * Voltage controlled small signal switch. 6.50+0.20 3.00+0.10 0.90+0.05 2.0+0.3 CONSTRUCTION * NPN Silicon Power Transistor 0.70+0.10 0.70+0.10 2.30+0.1 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 MARKING ZLN 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT 1 3 2 Emitter 3 Collector ( Heat Sink ) 2 Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - Tamb 25 C; note 1 - MIN. MAX. 100 100 6.0 5.0 1.0 2.0 +150 150 +150 UNIT V V V A A W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHZ5338ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 100V IC = 0; VEB = 6 V VCE = 2 V; note 1 IC = 500mA IC = 2.0 A IC = 5.0 A 30 30 20 - 120 - - - MIN. MAX. 10 100 UNIT nA nA VCEsat VBEsat Cc Ce fT collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = 2.0 A; IB = 2 0 0 mA IC = 5.0 A; IB = 5 0 0 mA IC = 2.0 A; IB = 2 0 0 mA IC = 5.0 A; IB = 5 0 0 mA IE = ie = 0; VCB = 1 0 V; f = 1 MHz IC = ic = 0; VBE = 2V; f = 1 MHz IC = 500 mA; VCE = 10 V; f = 10 MHz - - - - - - 30 0.7 1.2 1.2 1.8 250 1000 - V V V V pF pF MHz Switching times (between 10% and 90% levels); td tr ts tf Note 1. Pulse test: tp 300 s; 0.02. delay time rise time storage time fall time VCC=40V,IC=2.0A,IB1=IB2=200mA VCC=40V,VBE=3.0V,IC=2.0A, IB1=200mA - - - - 100 100 2.0 200 ns ns ns ns |
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