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2SK3691-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F 200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg VISO Ratings 600 600 4.5 18 30 4.5 261.1 2.8 20 5 28 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1 Note *2 Note *3
Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=1.8A,L=148mH, VCC=60V,RG=50
EAS limited by maximum channel temperature kV/s VDS<600V = and Avalanche current. kV/s Note *4 See to the `Avalanche Energy' graph Tc=25C W Note *3:Repetitive rating:Pulse width limited by Ta=25C maximum channel temperature. C See to the `Transient Thermal impedance' C graph. kVrms t=60sec. f=60Hz < < < Note *4:IF = -ID, -di/dt = 50A/s,VCC= BVDSS,Tch=150C
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=2.25A VGS=10V ID=2.25A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=2.25A VGS=10V RGS=10 VCC=300V ID=4.5A VGS=10V IF=4.5A VGS=0V Tch=25C IF=4.5A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient
Min.
600 3.0
Typ.
Max.
5.0 25 250 100 2.3 600 90 5 27 6 45 7.5 23 8 4.5 1.50
Units
V V A A nA S pF
2.5
10 1.8 5 400 60 3 18 4 30 5 15 5.5 3 1.00 0.7 3.5
ns
nC
V s C
Thermal characteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
4.464 58
Units
C/W C/W
1
2SK3691-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
90 80 70
8
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C
20V 10V 8V 6.5V
7
6 60 5 6.0V 50 40 3 30 20 10 0 0 25 50 75 100 125 150 2 VGS=5.5V
PD [W]
ID [A]
4
1
0 0 4 8 12 16 20 24
Tc [C]
VDS [V]
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10
10
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
ID[A]
gfs [S]
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1 0.1
1
10
VGS[V]
ID [A]
4.00 3.75 3.50
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=5.5V 6.0V
6.0 5.5 5.0 4.5
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=2.25A,VGS=10V
3.25
RDS(on) [ ]
4.0 3.00 2.75 2.50 2.25 1.5 2.00 1.0 1.75 1.50 0 1 2 3 4 5 6 7 8 9 0.5 0.0 -50 -25 0 25 50 75 100 125 150 6.5V 8V 10V 20V
RDS(on) [ ]
3.5 3.0 2.5 typ. 2.0 max.
ID [A]
Tch [C]
2
2SK3691-01MR
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=4.5A,Tch=25C
12 Vcc= 120V max. 300V 10 480V 8
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
6
4
2
0 0 5 10 15 20 25
Tch [C]
Qg [nC]
10
3
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Ciss
10
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C
10
2
C [pF]
IF [A]
Coss
1
1
10
Crss 10
0
10
0
10
1
10
2
10
3
0.1 0.0
0.5
1.0
1.5
2.0
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
300
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=4.5A
IAS=1.8A
tf
250
10
2
td(off) 200 IAS=2.7A
EAV [mJ]
t [ns]
150
td(on)
10
1
IAS=4.5A 100
tr 50
10
0
0 10
-1
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3691-01MR
FUJI POWER MOSFET
10
1
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V
Single Pulse
Avalanche Current I AV [A]
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
2
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
1
Zth(ch-c) [C/W]
10
0
10
-1
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4

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