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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 V 800 V 5 V 10 A 25 A 3 W .cn mi e ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 80 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2645 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage tf Fall Time w w w. IC= 1A; VCE= 5V IC= 8A; VCE= 5V IF= 8A sem isc .cn i 40 15 5 1.0 mA 130 mA 8 2.0 V IC= 5A, IB1= 1A; IB2= -2A 0.3 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD2645
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