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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1544 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 600 V 5 V 3.5 A 1 A 40 W .cn mi e IC Collector Current- Continuous IB B Base Current- Continuous PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1544 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain--Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance tf Fall Time w w. w IE= 0; VCB= 10V; ftest= 1.0MHz ICP= 3A, IB1(end)= 0.8A .cn mi cse is 8 3 MHz 95 pF 0.5 1.0 s isc Websitewww.iscsemi.cn 2 |
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