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| BC635 / BC637 / BC639 Elektronische Bauelemente NPN Type Plastic Encapsulated Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 14.30.2 4.50.2 FEATURE High current transistor 4.550.2 3.50.2 0.46+0.1 -0.1 (1.27 Typ. ) 0.43+0.08 -0.07 1.25-0.2 123 2.540.1 +0.2 1: Emitter 2: Collector 3: Base MAXIMUM RATINGS (TA=25 C unless otherwise specified) o PARAMETERS Collector - Emitter Voltage BC635 BC637 BC639 Collector - Base Voltage BC635 BC637 BC639 Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature o o SYMBOLS VCEO VALUES 45 60 80 UNIT V V V V V V V A W o VCBO 45 60 100 VEBO IC PC TJ,TSTG 5 1 0.625 150, -65 ~ 150 C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) PARAMETERS Collector - emitter breakdown voltage Collector cut-off current Emitter cut-off current SYMBOL V(BR)CEO I CBO I EBO hFE(1) hFE(2) DC current gain hFE(3) Collector - emitter saturation voltage Base - emitter voltage Transition frequency VCE(sat) VBE fT TEST CONDITIONS IC=10mA, IB=0 BC635 BC637 VCB=30V, IE=0 VEB=5V, IB=0 VCE=2V, IC=5mA VCE=2V, IC=150mA BC635 BC637-10/BC639-10 BC637-16/BC639-16 VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz BC639 MIN 45 60 80 0.1 0.1 25 40 63 100 25 250 160 250 0.5 1 100 V V MHz TYP MAX UNIT V V V A A CLASSIFICATION OF hFE(2) RANK RANGE BC635 40-250 BC637-10, BC639-10 63-160 BC637-16, BC639-16 100-250 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BC635 / BC637 / BC639 Elektronische Bauelemente NPN Type Plastic Encapsulated Transistor Typical Characteristics Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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