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| STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (Note 3) Continuous Drain Current, (Note 3) Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0 10 0.30 0.50 0.95 REF. 1.90 REF. Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 Ratings -30 20 -4.0 -3.3 -20 2.0 0.016 -55~+150 Unit V V A A A W W/ C C Thermal Data Parameter Thermal Resistance Junction-ambient (Note 3) Symbol Rthj-a Ratings 62.5 Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gat Thershold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=55 oC) StaticDrain-Source On-Resistance 2 o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 oC,ID=-1mA VDS=VGS, ID=-250uA VGS= 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-4.0A VGS=-4.5V, ID=-3.0A -0.02 _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -25 80 120 8.8 _ _ _ _ 5.5 1 2.6 7 6 18 4 400 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge Gate-Source Charge 2 Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-4.0A VDS=-24V VGS=-4.5V _ _ _ _ VDD=-15V ID=-1A nS VGS=-10V RG=3.3[ RD=15 [ 640 _ _ 90 30 6 pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-5V, ID=-4.0A Source-Drain Diode Parameter Forward On Voltage 2 2 Symbol VDS Trr Qrr Min. _ Typ. _ 21 14 Max. -1.2 Unit V Test Condition IS=-1.6A, VGS=0V. Is=-4.0A, VGS=0V dl/dt=100A/us Reverse Recovery Time _ _ _ _ nS nC Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. O 3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 STT2605 Elektronische Bauelemente -4.0A -30V,RDS(ON) 80m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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