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ST 2SC4115
NPN Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
Features
Low VCE(sat) Excellent current gain characteristics
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current IC 5 Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms Ptot Tj TS 300 150 -55 to +150 A(Pulse)* mW
O O
Value 40 20 6 3
Unit V V V A(DC)
VCBO VCEO VEBO
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 05/04/2003
ST 2SC4115
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=100mA Current Gain Group Q R S Collector Base Breakdown voltage at IC =50 A Collector Emitter Breakdown Voltage at IC =1mA Emitter Base Breakdown Voltage at IE =50 A Collector Cutoff Current at VCB=30V Collector Cutoff Current at VEB=5V Collector Emitter Saturation Voltage* at IC=2A, IB=100mA Transition Frequency at VCE=2V, IE=-500mA, f=100MHz Collector Output Capacitance at VCE=10V, f=1MHz *Note: Measured using pulse current. COB 25 pF fT 290 MHz VCE(sat) 0.2 0.5 V IEBO 0.1 A ICBO 0.1 A V(BR)EBO 6 V V(BR)CEO 20 V V(BR)CBO 40 V hFE hFE hFE 120 180 270 270 390 560 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 05/04/2003
ST 2SC4115
Grounded emitter propagation characteristics 10 5
COLLECTOR CURRENT, A
VCE=2V
GROUNDED EMITTER OUTPUT CHARACTERISTICS (1)
GROUNDED EMITTER OUTPUT CHARACTERISTICS (2)
2
COLLECTOR CURRENT, A
16mA 18mA 20mA
14mA 12mA
COLLECTOR CURRENT, A
2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 0.4 0.8 1.2 1.4
Ta=100 C 25 C -40 C
1.6 1.2
Ta=25 C 10mA 8mA 6mA
5 4 3 2
45mA 50mA
40mA 35mA Ta=25 C 30mA 25mA 20mA 15mA 10mA
4mA
0.8
2mA
5mA
0.4 0 0
I B=0A
1 0 0
I B=0A
0.2
0.4
0.6
0.8
1.0
1
2
3
4
5
COLLECTOR EMITTER VOLTAGE, V
COLLECTOR EMITTER VOLTAGE, V
Base emiter voltage,V
DC CURRENT GAIN VS. COLLECTOR CURRENT
5000
COLLECTOR EMITTER SATURATION VOLTAGE vs. COLLECTOR CURRENT (1)
1
COLLECTOR EMITTER SATURATION VOLTAGE vs. COLLECTOR CURRENT (2)
1
COLLECTOR SATURATION VOLTAGE, V
DC CURRENT GAIN , hFE
VCE=2V
2000 1000 500 200 100 50 20 10 5 1m 2m 5m 0.01
COLLECTOR SATURATION VOLTAGE, V
Ta=100 C 25 C -40 C
0.5 0.2 0.1 50m 20m 10m 5m 2m
I C/IB=10
Ta=100 C 25 C -40 C
0.5 0.2 0.1 0.05 0.02 0.01 5m 2m
I C/IB=20
Ta=100 C 25 C -40 C
0.05 0.1 0.2 0.5 1 2
5
10
1m 1m 2m 5m 0.01
0.05 0.1 0.2 0.5 1 2
5
10
1m 1m 2m 5m 0.01
0.05 0.1 0.2 0.5 1 2
5
10
COLLECTOR CURRENT, A
COLLECTOR CURRENT, A
COLLECTOR CURRENT, A
Collector output capacitance vs.collector base voltage Emitter input capacitance vs. emitter base voltage Ta=25 C f=1MHz Cob 200 100 Cob
COLLECTOR EMITTER SATURATION VOLTAGE vs. COLLECTOR CURRENT (3)
GAIN BANDWIDTH PRODUCT
VS.EMITTER CURRENT 1000
TRANSITION FREQUENCY, MHz
COLLECTOR SATURATION VOLTAGE, V
0.5 0.2 0.1 50m 20m 10m 5m 2m
I C/IB=20
Ta=100 C 25 C -40 C
Ta=25 C VCE=2V 200 100
20 10
Collector output capacitance,pF Emitte input capacitance,pF
1
1000
2 1 -1 -2 -10 -20 -100 -200 -1000 EMITTER CURRENT, mA
20 10 0.1 0.2 1 2 10 20 50
1m 1m 2m
10m 20m
0.1 0.2
12
10
COLLECTOR CURRENT, A
Collector base voltage, v Emitter base voltage, v
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 05/04/2003

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