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| BAV200~BAV203 SILICON EPITAXIAL PLANAR DIODES Switching Diode LS-34 Applications: General Purposes QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage BAV200 BAV201 BAV202 BAV203 Reverse Voltage BAV200 BAV201 BAV202 BAV203 Forward Current Forward Peak Current (at f = 50 Hz) Peak Forward Surge Current (at tp = 1 s) Junction Temperature Storage Temperature Range Symbol Value 60 120 200 250 50 100 150 200 250 625 1 175 - 65 to + 175 Unit VRRM V VR V IF IFM IFSM Tj TS mA mA A O C C O Maximum Thermal Resistance at Tj = 25 OC Parameter Thermal Resistance Junction to Ambient at on PC board 50 mm X 50 mm X 1.6 mm Symbol RthJA Max. 500 Unit K/W SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007 BAV200~BAV203 Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 50 V at VR = 100 V at VR = 150 V at VR = 200 V Breakdown Voltage at IR = 100 A BAV200 BAV201 BAV202 BAV203 BAV200 BAV201 BAV202 BAV203 Symbol VF Min. 60 120 200 250 Typ. 5 1.5 Max. 1 100 100 100 100 50 Unit V nA nA nA nA V V V V pF ns IR V(BR) Differential Forward Resistance at IF = 10 mA Capacitance at VR = 0, f = 1MHz Reverse Recovery Time at IF = 30 mA, IR = 30 mA, IR = 3 mA, RL = 100 rf CD trr Characteristics (Tj=25C unless otherwise specified) 1000 1000 IF - Forward Current (mA) IR - Reverse Current ( A) 100 Scattering Limit 100 Tj=25C 10 10 Scattering Limit 1 0.1 VR=VRRM 1 0.01 0 40 80 120 160 200 0.1 0 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature (C) Fig 1. Reverse Current vs. Junction Temperature VF - Forward Voltage (V) Fig 2. Forward Current vs. Forward Voltage SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007 |
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