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| 2SC2235 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon General Purpose Transistor FEATURES Complementary to 2SA965 TO-92 MOD 6.00.2 4.90.2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VBCBO B Parameter Collector-Base Voltage Collector-Emitter Voltage B B Value 120 120 5 0.8 0.9 150 -55to+150 Units V V V A W 1.00.1 B VBEBO B Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature IBC B PBC B 140.2 0.50 +0.1 -0.1 (1.50 Typ.) 1.9 +0.1 -0.1 123 3.00.1 0.45 +0.1 -0.1 VBCEO TBJ B TBstg B 2.0 +0.3 -0.2 8.60.2 1: Emitter 2: Collector 3: Base Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol VB(BR)CBO B B unless otherwise specified) Test B conditions MIN 120 120 5 TYP MAX UNIT V V V IBC=1mA,IBE=0 B VB(BR)CEO VB(BR)EBO B IBC=10mA,IBB=0 B B IBE=1mA,IBC=0 B B IBCBO B VBCB=120V,IBE=0 B B 0.1 0.1 80 240 1.0 1.0 120 30 A A IBEBO B VBEB=5V,IBC=0 B B hBFE B B VBCE=5V,IBC=100mA B B VBCE(sat) VBBE B IBC=500mA,IBB=50mA B B V V MHz pF IBC=500mA, VBCE=5V B B fBT B VBCE=5V, IBC=100mA B B Cob VBCE=10V, IBE=0 B B f=1MHz CLASSIFICATION OF Rank Range hFE O 80-160 Y 120-240 http://www.SeCoSGmbH.com/ 17-May-2007 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SC2235 Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com/ 17-May-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 2 |
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