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| 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM Ptot TJ Ts Value 25 20 100 50 1 100 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Typ. 3.9 Max. 0.55 0.5 Unit V A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/11/2006 1SS413 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND A C HE D A E bp UNIT mm A 0.70 0.60 bp 0.4 0.3 C 0.135 0.127 D 1.25 1.15 E 0.85 0.75 HE 1.7 1.5 V 0.1 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/11/2006 |
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