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| Datasheet File OCR Text: |
| 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications * Ultra high speed switching 1 2 Marking Code: PH Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Peak Forward Surge Current (tp = 10 ms) Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot TJ Ts Value 85 80 100 300 2 200 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 Symbol VF IR CT trr Min. Max. 1.2 0.1 0.5 3 4 Unit V A pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/10/2008 1SS301CCW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/10/2008 |
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