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AO5401E P-Channel Enhancement Mode Field Effect Transistor General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS compliant -AO5401EL is Halogen Free SC89-3L Top View D Features VDS (V) = -20V ID = -0.5 A (VGS = -4.5V) RDS(ON) < 0.8 (VGS = -4.5V) RDS(ON) < 1 (VGS = -2.5V) RDS(ON) < 1.3 (VGS = -1.8V) ESD PROTECTED! D G S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25C Power Dissipation A Steady State -20 8 -0.5 -0.40 -1 0.28 0.18 -55 to 150 Units V V A VGS TA=25C TA=70C ID IDM TA=70C PD TJ, TSTG 0.38 0.24 -0.5 -0.45 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t 10s Steady-State Steady-State RJA RJL Typ 275 360 300 Max 330 450 350 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5401E Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=10V, VGS=4.5V VDS=10V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-0.5A VGS=-1.8V, ID=-0.3A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-0.5A IS=-0.1A,VGS=0V -0.4 -1 0.53 0.75 0.72 0.95 0.9 -0.66 -1 -0.5 72 VGS=0V, VDS=-10V, f=1MHz 17 9 60.5 VGS=-4.5V, VDS=-10V, RL=50, RGEN=3 IF=-0.5A, dI/dt=100A/s 2 Min -20 Typ Max Units V 1 5 1 10 -0.5 -0.9 0.8 0.95 1 1.3 A A V A S V A pF pF pF ns ns ns ns Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Output Capacitance Reverse Transfer Capacitance 100 SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-0.5A, dI/dt=100A/s 150 612 436 27 8.3 35 ns nC A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 4 : Oct 2008 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5401E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 -6V 4 -3.5V -ID(A) -4.5V -4V 2 -10V 3 VDS=-5V 25C -ID (A) 3 2 -3V -2.5V 125C 1 1 VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 1.4 1.2 RDS(ON) ( ) 1 VGS=-2.5V 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V Normalized On-Resistance 1.6 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V 1.4 VGS=-1.8V VGS=-4.5V 1.2 VGS=-2.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.1 1 0.9 RDS(ON) ( ) 0.8 0.7 0.6 0.5 0.4 0.3 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-0.5A 1.0E+00 1.0E-01 125C 1.0E-02 -IS (A) 25C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5401E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=-10V ID=-0.5A Capacitance (pF) 100 Ciss 80 4 -VGS (Volts) 3 60 2 40 Coss 20 Crss 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.00 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150C, TA=25C 14 12 TJ(Max)=150C TA=25C -ID (Amps) 1.00 10 100s 1ms 0.10 Power (W) 8 6 4 2 0 0.0001 RDS(ON) 1s limited 10s DC 10ms 0.1s 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=450C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5401E Gate Charge Test Circuit & Waveform Vgs Qg -10V VDC VDC DUT Vgs Ig RL Vds Vgs Vgs Rg DUT VDC Vgs Vds Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs t rr Vds - Isd Vgs L VDC + Vdd -Vds Ig Alpha & Omega Semiconductor, Ltd. + - + Charge - + - Vds Qgs Qgd Resistive Switching Test Circuit & Waveforms ton td(on) tr t d(off) toff tf Vdd 90% 10% Q rr = - Idt -Isd -I F dI/dt -I RM Vdd www.aosmd.com |
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