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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB628 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *Complement to Type 2SD608 APPLICATIONS *Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE -160 -160 -5 -1.5 -3.0 -0.3 1.5 UNIT V V .cn mi e V A Collector Current-Peak A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 A PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 20 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB628 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -1.0 A hFE-1 DC Current Gain IC= -5mA; VCE= -5V hFE-2 DC Current Gain COB Collector Output Capacitance fT Current-Gain--Bandwidth Product hFE-2 Classifications S 40-80 R 60-120 w w Q 100-200 w. sem isc IC= -0.3A; VCE= -5V IE= 0; VCB= -10V; f= 1MHz IC= -0.1A; VCE= -5V .cn i 40 25 200 35 pF 40 MHz isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SB628
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