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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1342 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage DARLINGTON APPLICATIONS For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220Fa) and symbol HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -80 -80 -7 -4 -6 UNIT V V V A A Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 30 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1342 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A; IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-4mA -1.0 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -100 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-3V 1000 10000 fT COB Transition frequency Output capacitance IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz HAN INC SEM GE OND IC TOR UC 12 45 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1342 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
Price & Availability of 2SB1342
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