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| RK3055E Transistors 10V Drive Nch MOS FET RK3055E Structure Silicon N-channel MOS FET External dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. 5.5 1.5 0.9 0.75 0.65 (1)Gate (2)Drain (3)Source 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 Abbreviated symbol : 3055E Applications Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RK3055E Taping TL 2500 Inner circuit (1) Gate (2) Drain (3) Source (1) (2) (3) Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP PD Tch Tstg Limits 60 Unit V V A A A A W 20 8 20 8 20 20 150 -55 to +150 Total power dissipation (Tc=25C) Channel temperature Storage temperature C C Pw10s, Duty cycle1% Rev.A 2.5 1.5 9.5 1/4 RK3055E Transistors Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf Min. - 60 - 1.0 - 4.0 - - - - - - - Typ. - - - - - - 520 240 100 5.0 20 50 20 Max. Unit nA V A V S pF pF pF ns ns ns ns Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=4A, VGS=10V ID=4A, VDS=15V VDS=10V VG=0V f=1MHz 100 - 10 2.5 0.15 - - - - - - - - ID=2.5A, VDD VGS=10V RL=12 RG=10 30V Pw 300s, Duty cycle 1% Electrical characteristics curve 50 DRAIN CURRENT : ID (A) PW DC Op 1m =1 s 7 6 5 4 3 2 1 0m s 4V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) ea ar his n) n t R DS(o 20 i on y ati b 10 per ited O lim is 5 2 1 0.5 0.2 Tc=25C Single pulse 0.1 0.5 1 2 10 100s 9 8 10V 8V 6V 5V Ta=25C Pulsed 10 VDS=10V 5 Pulsed Ta=125C 75C 2 25C -25C 1 0.5 0.2 0.1 0.05 0.02 er at ion VGS=3V 5 10 20 50 100 0 0 1 2 3 4 5 0.01 0 1 2 3 4 5 6 7 8 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Maximum Safe Operating Area Fig.2 Typical Output Characteristics Fig.3 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE : VGS(th) (V) 4.0 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=10V ID=1mA VGS=10V 5 Pulsed 2 1 Ta=125C 75C 25C -25C 10 VGS=4V 5 Pulsed 2 3.0 1 0.5 0.2 0.5 0.2 0.1 0.05 0.02 Ta=125C 75C 25C -25C 2.0 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 1.0 0 -50 -25 0 25 50 75 100 125 150 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.5 1.0 2.0 5.0 10.0 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) Fig.4 Gate Threshold Voltage Fig.9 vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance Fig.9 vs. Drain Current ( ) Fig.6 Static Drain-Source On-State Resistance Fig.9 vs. Drain Current ( ) Rev.A 2/4 RK3055E Transistors Ta=25C Pulsed 0.6 FORWARD TRANSFER ADMITTANCE : YfS (S) 0.3 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=10V Pulsed VDS=15V 50 Pulsed 20 0.5 0.4 0.3 0.2 ID=5A 0.2 ID=5A 2.5A 0.1 10 5 2 Ta = -25C 25C 75C 125C 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.1 0 -50 -25 2.5A 0 5 10 15 20 0 25 50 75 100 125 150 0.5 1 2.0 5.0 10 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : I D (A) Fig.7 Static Drain-Source On-State Resistance Fig.9 vs. Gate-Source Voltage Fig.8 Static Drain-Source On-State Resistance Fig.9 vs. Channel Temperature Fig.9 Forward Transfer Admittance Fig.9 vs. Drain Current REVERSE DRAIN CURRENT : IDR (A) 5 VGS=0V Pulsed Ta=125C 75C 25C -25C REVERSE DRAIN CURRENT : IDR (A) 10 5 Ta=25C Pulsed 10000 5000 CAPACITANCE : C (pF) VGS=10V 0V 2 1 0.5 0.2 0.1 0.05 0 1 0.5 2000 1000 500 200 100 50 20 Ta=25C f=1MHz VGS=0V Pulsed Ciss C os Crs s s 0.1 0.05 0.5 1.0 1.5 0.01 0 0.5 1.0 1.5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current Fig.14 vs. Source-Drain Voltage ( ) Fig.11 Reverse Drain Current Fig.14 vs. Source-Drain Voltage ( ) Fig.12 Typical Capacitance Fig.14 vs. Drain-Source Voltage 1000 500 SWITCHING TIME : t (ns) 200 100 50 20 10 5 2 0.05 td(off) tf tr REVERSE RECOVERY TIME : trr (ns) Ta=25C VDD=30V VGS=10V RG=10 Pulsed 1000 di/dt=50A/s VGS=0V 500 Ta=25C Pulsed 100 50 td(on) 0.1 0.2 0.5 1 2 5 10 10 0.1 0.2 0.5 1 2 5 10 DRAIN CURRENT : I D (A) REVERSE DRAIN CURRENT : IDR (A) Fig.13 Switching Characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) Fig.14 Reverse Recovery Time Fig.14 vs. Reverse Drain Current Rev.A 3/4 RK3055E Transistors 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25C th (ch-c) (t)=r (t) th (ch-c) th (ch-c)=6.25C/W 0.01 0.01 Single pulse PW T 0.001 1 D=PW T 100 1m 10m 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width Switching characteristics measurement circuit Pulse Width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td (off) tf toff VDD td (on) ton tr Fig.16 Switching Time Test Circuit Fig.17 Switching Time Waveforms Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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