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| SMD Type Transistors IC N-Channel Logic Level PowerTrench MOSFET KDB7045L TO-263 Features + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 100 A, 30 V. RDS(ON) = 0.0045 RDS(ON) = 0.006 @ VGS = 10 V @ VGS = 4.5 V Rugged internal source-drain diode can eliminate the + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 need for an external Zener diode transient suppressor High performance trench technology for extremely low RDS(ON) 175 maximum junction temperature rating 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 elevated temperature + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient PD PD TJ, TSTG R R JC JA Symbol VDSS VGS Rating 30 20 100 Unit V V A A W W/ ID 75 300 125 0.85 -65 to 175 1.2 62.5 /W /W 5 .6 0 Critical DC electrical parameters specified at 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KDB7045L Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSSF IGSSR VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 ID = 250 A Transistors IC Min 30 Typ Max Unit V A, Referenced to 25 22 1 100 -100 1 1.5 -5 0.0039 0.0045 0.0056 0.0070 0.0048 0.0060 50 120 5400 3 mV/ A nA nA V mV/ VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 ID = -250 A A, Referenced to 25 VGS = 10 V, ID = 50 A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 50 A, TJ = 125 VGS = 4.5 V, ID = 40 A On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current * Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width 300 s, Duty Cycle ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD 2.0% VGS = 0 V, IS = 50 A * VDS = 15 V, ID = 50 A,VGS = 5 V * VDD = 15 V, ID = 50 A,VGS = 10 V, RGEN = 10 ,RGS=10 * VDS = 15 V, VGS = 0 V,f = 1.0 MHz VGS = 10 V, VDS = 10 V VDS = 5 V, ID = 50 A m A S pF pF pF 1170 530 14 114 105 115 50 16 16 75 0.95 1.2 30 160 150 160 70 ns ns ns ns nC nC nC A V 2 www.kexin.com.cn |
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