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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4765 DESCRIPTION *High Breakdown Voltage: VCBO= 1700V (Min) *High Switching Speed *Low Saturation Voltage *Built-in Damper Diode APPLICATIONS *Horizontal deflection output for medium resolution display. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1700 V 600 V 5 V 5 A 10 A 2.5 A .cn mi e ICP Collector Current-Pulse IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4765 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A 1.5 V ICBO Collector Cutoff Current VCB= 1700V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product COB Output Capacitance w w w. sem isc IC= 1A ; VCE= 5V IC= 3.5A ; VCE= 5V IF= 3.5A IC= 0.1A ; VCE= 10V .cn i 8 3.5 1 3 250 66 200 mA 7.5 2.0 V MHz IE=0 ; VCB=10V;ftest=1.0MHz pF Switching times ;Resistive load tstg Storage Time IC= 3.5A , IB1= 0.7A ; IB2= -1.4A RL= 56 3.0 s tf Fall Time 0.2 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4765 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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