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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. 15V. High VEBO : VEBO Small size making it easy to provide high-density, hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 15 200 300 40 1.3 150 -55 to +150 Unit V V V mA mA mA W www.kexin.com.cn 1 SMD Type 2SC4705 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 40V, IE=0 VEB = 10V, IC=0 VCE = 5V , IC = 100mA VCE = 10V , IC = 10mA VCB = 10V , f = 1.0MHz Transistors Min Typ Max 0.1 0.1 Unit iA iA 800 1500 250 4 0.12 0.85 3200 MHz pF 0.5 1.2 V V V V V VCE(sat) IC = 100 mA , IB = 2 mA VBE(sat) IC = 100 mA , IB = 2 mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 60 50 15 Marking Marking CP 2 www.kexin.com.cn |
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