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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PN package *High speed switching *Good linearity of hFE *High VCBO APPLICATIONS *For high speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3285 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 1000 800 7 3 6 2 70 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ; IE=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=1000V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=0.2A ; VCE=5V 6 MIN 800 2SC3285 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE fT TYP. MAX UNIT V 1.5 1.5 50 50 V V A A 4 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A; IB1=0.4A;IB2=-0.8A VCC=250V 1.0 2.5 0.5 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3285 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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