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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION *High Collector-Emitter Breakdown Voltage:V(BR)CEO= 300V(Min) *DC Current Gain: hFE= 40-170 @IC= 50mA, VCE= 10V *High Current-Gain Bandwidth Product APPLICATIONS *Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 300 300 5 150 -150 1.5 UNIT .cn mi e V V V mA IE Emitter Current-Continuous Collector Power Dissipation @ Ta=25 mA PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 12.5 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1569 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 100mA; IB= 20mA 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 A hFE DC Current Gain IC= 50mA ; VCE= 10V COB Output Capacitance fT Current-Gain--Bandwidth Product w w scs .i w IE= 0; VCB= 50V; ftest= 1MHz IC= 30mA; VCE= 10V .cn mi e 40 40 170 5 pF MHz isc Websitewww.iscsemi.cn 2 |
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