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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB921 DESCRIPTION *High Collector Current:: IC= -7A *Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A *Complement to Type 2SD1237 APPLICATIONS *Designed for large current switching of relay drivers, highspeed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE -120 -80 -6 -7 -12 40 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ TC=25 PC Total Power Dissipation @ Ta=25 TJ Junction Temperature 1.75 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= -1mA; RBE= IC= -1mA; IE= 0 IE= -1mA; IC= 0 IC= -4A; IB= -0.4A B 2SB921 MIN -80 -120 -6 TYP. MAX UNIT V V V -0.5 -0.1 -0.1 70 280 V mA mA VCB= -80V; IE= 0 VEB= -4V; IC= 0 IC= -1A; VCE= -2V Switching times ton tstg tf Turn-on Time Storage Time Fall Time ww w S 140-280 scs .i IC= -4A; VCE= -2V IC= -1A; VCE= -5V .cn mi e 30 20 MHz 0.2 0.7 0.2 s s s RL= 1.67, VCC= -50V IC= -2A; IB1= -IB2= -0.2A hFE-1 Classifications Q 70-140 R 100-200 isc Websitewww.iscsemi.cn 2 |
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