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| INCHANGE Semiconductor isc Product Specification 2SB681 isc Silicon PNP Power Transistor DESCRIPTION *High Current Capability *Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) APPLICATIONS *For AF power amplifier use. *Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -12 A PC 100 W Tj 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SB681 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.5 V ICEO Collector Cutoff Current VCE= -120V; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 40 140 hFE-2 DC Current Gain IC= -5A ; VCE= -5V 20 fT Current-Gain--Bandwidth Product IC= -1A ; VCE= -5V 13 MHz isc Websitewww.iscsemi.cn |
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