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| Product Description The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss vs. Frequency ID= 80 mA (Typ.) Tuned Application Circuit (fig.1) 25 20 Gain Gain (dB) SBW-5089 SBW-5089Z Pb RoHS Compliant & Green Package DC-8 GHz Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features * Available in Lead Free, RoHS Compliant * * * * * * green package ( Z Suffix ) 50 Ohm Cascadable Gain Block Wideband Flat Gain to 3 GHz: +/-1.4dB P1dB = 13.4 @ 6 GHz Input / Output VSWR < 2:3 to 8 GHz Patented Thermal Design Single Voltage Supply Operation 0 -5 Return Loss (dB) 15 ORL -10 10 IRL 5 0 0 1 2 3 4 5 6 7 8 Frequency (GHz) -15 -20 -25 Applications * Wideband Instrumentation * Fiber Optic Driver * OC-48 * Basestation * SAT COM U nits Frequency 850 MHz 3000 MHz 4200 MHz 6000 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz 1950MHz Min. 19.3 17.0 14.5 18.4 32.0 Typ. 20.3 18.0 17.2 15.5 20.1 19.4 35.5 34.0 13.0 6000 D C -6000MHz D C -6000MHz 1950 MHz 4.5 72 7 8 10 10 3.9 4.9 80 70 4.4 5.3 88 Max. 21.3 19.0 16.5 Symbol Parameter Small Si gnal Gai n ( PC board and connector losses de-embeded ) G dB P 1dB OIP3 Pout Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt Output Power @ -45dBc AC P IS-95 9 Forward C hannels dB m dB m dB m MHz dB dB dB V mA C /W Bandwi dth D etermi ned by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Worst case Input Return Loss Worst case Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) Test Conditions: VS = 8 V ID = 80 mA Typ. Bias Resistance = 39 Ohms OIP3 Tone Spacing = 1 MHz Pout per tone = 0 dBm TL = 25C ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 1 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Symbol Parameter Units Frequency (MHz ) 500 850 1950 2400 3500 5800 G OIP3 P 1dB IRL ORL S 12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure dB dB m dB m dB dB dB dB 20.5 36.5 20.2 26 19 22 3.6 20.3 35.5 20.1 26 17.5 23 3.6 19.1 34.0 19.4 19 12 23 3.9 18.7 33.0 19.4 15 11 23 3.9 17.3 30.5 17.5 12 10.5 23 4.1 TLEAD = 25C ZS = ZL = 50 Ohms 15.1 25.5 13.4 12.5 10.9 23 4.3 Test Conditions: VS = 8 V ID = 80 mA Typ. Bias Resistance = 39 Ohms OIP3 Tone Spacing = 1 MHz Pout per tone = 0 dBm * 5.8GHz data measured with tuned app circuit in fig. 2. Absolute Maximum R atings 26 23 20 P1dB vs. Frequency Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Operati ng D i ssi pated Power Max. Juncti on Temp. (TJ) Operati ng Temp. Range (TL) Absolute Limit 130 mA 6V +17 dBm 0.65 W +150C -40C to +85C +150C P1dB (dBm) 17 14 11 -40C Max. Storage Temp. +25C +85C 8 5 0 1 2 3 4 Frequency(GHz) 5 6 Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as condi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency 39 36 33 6 5 4 Noise Figure vs. Frequency OIP3 (dBm) 30 27 24 21 18 15 12 -40C +25C +85C NF (dB) 3 2 -40C 1 0 +25C +85C 0 1 2 3 4 Frequency (GHz) 5 6 0 1 2 3 4 Frequency (GHz) 5 6 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 2 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Typical RF Performance Over Lead Temperature In Basic Application Circuit (Fig.2) ( Bias: ID= 80 mA Typ.) 25 20 |S21| (dB) 15 10 5 0 0 1 2 |S | vs. Frequency 21 0 -5 -10 |S11| (dB) -15 -20 -25 -30 -35 -40 |S | vs. Frequency 11 -40C +25C +85C -40C +25C +85C 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) -10 -15 |S12| (dB) -20 -25 -30 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) Frequency (GHz) |S | vs. Frequency 12 0 -5 |S22| (dB) -40C +25C +85C |S | vs. Frequency 22 -10 -15 -20 -25 -30 -35 -40 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) -40C +25C +85C NOTE: Full S-parameter data available at www.sirenza.com IS-95 @ 850MHz Adj. Channel Pwr. vs. Channel output Pwr. -30 -35 -40 -45 dBc -50 -55 -60 -65 -70 6 -30 -35 -40 -45 dBc -50 -55 -60 -65 -70 6 IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power -40C +25C +85C -40C +25C +85C 8 10 dBm 12 14 16 8 10 dBm 12 14 16 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 3 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Typical RF Performance Over Lead Temperature In Tuned Application Circuit (Fig.1) ( Bias: ID= 80 mA Typ.) 25 20 |S21| (dB) 15 10 5 0 0 1 2 |S | vs. Frequency 21 0 -10 |S11| (dB) -20 -30 -40 |S | vs. Frequency 11 -40C +25C +85C -40C +25C +85C 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) Frequency (GHz) -10 -15 |S12| (dB) -20 -25 -30 0 1 2 |S | vs. Frequency 12 0 -40C +25C +85C |S | vs. Frequency 22 -10 |S22| (dB) -20 -30 -40 -40C +25C +85C 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) Frequency (GHz) NOTE: Full S-parameter data available at www.sirenza.com 4 RF in BW5 1 SBW-5089 3 Z = 50 Elec. Len. = 13.1 RF out C1 2 IN C1 C1 = 0.1pF 0805 AVX OUT Substrate Material = Getek ML200C, 0 .031" thick, Er = 4.2, 1oz. cladding Copper Shims SIRENZA MICRODEVICES ECB-100607 Rev B Figure 1. Tuned Application Circuit 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 4 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier Fig. 2 Basic Application Circuit RBIAS VS 1 uF 1000 pF ID Application Circuit Element Values Reference Designator CB Frequency (Mhz ) 100 1000 pF 100 pF 470 nH 500 850 1950 68 pF 22 pF 22 nH 2400 56 pF 22 pF 18 nH 3500 39 pF 15 pF 15 nH CD RLDC Bias Inductor 220 pF 100 pF 100 pF 68 nH 68 pF 33 nH CD LC LC 4 RF in CB 1 SW-5089 Recommended Bias Resistance for ID = 80 mA 3 VD CB RF out Supply Voltage (VS ) (Volts) Bias Resistance* (Ohms) <7 N/R 7 26 7.5 33 8 39 9 52 10 64 12 89 2 * Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID Select RBIAS so that RBIAS + RLDC ~ the recommended bias resistance. Use 1% or 5 % tolerance resisistors or parallel combinations to attain the recommended bias resistance +/- 3%. RBIAS provides current stability over temperature. VS RBIAS 1 uF 1000 pF * N/R= No t Re c o m m e nd e d . C o nta c t S i r e nza te c hni c a l s up p o r t fo r guidance when available supply voltage is <7 V. CD BW5 Device Pin Out Guide Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. LC CB CB 1 2, 4 GND 3 RF OUT / DC BIAS Part Identification Marking Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1C 1 4 4 BW5 1 2 3 1 2 3 BW5Z 2 3 2 The product qualification report may be dow nloaded at w w w.sirenza.com Tin-Lead Lead Free RoHs Compliant Part Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number SBW-5089 SBW-5089Z P ackag e / L ead Composition Tin-Lead Lead Free, RoHs Compliant 1 R eel Siz e 7" 7" 3 MSL 1 Devices / R eel 1000 1000 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 5 Phone: (800) SMI-MMIC http://www.sirenza.com SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier SOT-89 PCB Pad Layout Dimensions in inches [millimeters] RF IN RF OUT Notes: 1 Solder the copper pad on the backside of the device package to the ground plane. 2 Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 3 Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 4. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. SOT-89 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-89 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 South Technology Court Broomfield, CO 80021 EDS-103325 Rev. C 6 Phone: (800) SMI-MMIC http://www.sirenza.com |
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