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| SMD Type HEXFET Power MOSFET KRF7506 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching IC IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V @ TA = 25 Continuous Drain Current, VGS @ -10V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R JA Symbol ID ID IDM @TA= 25 PD Rating -1.7 -1.4 -9.6 1.25 10 20 5.0 -55 to + 150 100 Unit A W m W/ V V/ns /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -1.2A, di/dt -140A/ s, VDD 10sec V(BR)DSS,TJ 150 www.kexin.com.cn 1 SMD Type KRF7506 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -1.2A, VGS = 0V*1 TJ = 25 , IF =-1.2A di/dt = -100A/ s*1 30 37 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -1.2A*1 VGS = -4.5V, ID = -0.60A*1 Min -30 Typ Max Unit V -0.039 0.27 0.45 -1.0 0.92 -1.0 -25 -100 100 7.5 1.3 2.5 9.7 12 19 9.3 180 87 42 -1.25 11 1.9 3.7 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -0.60A*1 VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125 V S A IGSS VGS = -20V VGS = 20V ID = -1.2A VDS = -24V VGS = -10V VDD = -15V ID = -1.2A RD = 6.2 Rg = 12 VGS = 0V VDS = -25V f = 1.0MHz nA nC ns pF A Body Diode) *2 -9.6 -1.2 45 55 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn |
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