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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2075 DESCRIPTION *With TO-220 package *High transition frequency *Wide area of safe operation APPLICATIONS *27MHz power amplifier applications *Recommended for output stage application of AM 4W transmitter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 4 4 -4 10 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC2075 MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3 A 1.5 V V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage IC=10mA; IB=0 IE=1.0mA; IC=0 80 V Emitter-base breakdown voltage 4 V A A ICBO Collector cut-off current VCB=30V;IE=0 10 IEBO Emitter cut-off current VEB=4V; IC=0 10 hFE-1 DC current gain IC=0.5A ; VCE=5V 25 hFE-2 DC current gain IC=3A ; VCE=2V 15 COB fT Output capacitance IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 40 pF Transition frequency 100 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2075 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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