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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1362 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD2053 APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current (DC) Collector current -peak Junction temperature Storage temperature SEM GE Open base OND IC TOR UC VALUE -150 -150 -5 -9 -15 UNIT V V V A A W ae ae Open collector Collector power dissipation TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1362 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -2.0 V VBE Base-emitter on voltage IC=-7A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -50 |I A hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain hFE-3 fT DC current gain IC=-1A ; VCE=-5V 60 200 IC=-7A ; VCE=-5V 15 Transition frequency COB Collector output capacitance hFE-2 Classifications Q 60-120 P HAN INC 100-200 SEM GE IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V OND IC TOR UC 15 270 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1362 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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