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| TP0101K New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY VDS (V) -20 20 D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A) -0.58 -0.5 rDS(on) (W) 0.65 @ VGS = -4.5 V 0.85 @ VGS = -2.5 V APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching-Cell Phones, Pagers TO-236 (SOT-23) Marking Code: K4ywl 3 S 2 D K4 = Part Number Code for TP0101K y = Year Code w = Week Code l = Lot Traceability G 100 W D G 1 Top View S Ordering Information: TP0101K-T1--E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg Limits -20 "8 -0.58 -0.46 -2 -0.3 0.35 0.22 -55 to 150 Unit V A Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72692 S-40248--Rev. A, 16-Feb-04 www.vishay.com Symbol RthJA Limits 357 Unit _C/W 1 TP0101K Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State On State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltagea V(BR)DSS VGS(th) IGSS IDSS ID( ) D(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -10 mA VDS = VGS, ID = -50 mA VDS = 0 V, VGS = "4.5 V VDS = -20 V, VGS = 0 V TJ = 55_C VDS v -5 V, VGS = -4.5 V VDS v -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -0.58 A VGS = -2.5 V, ID = -0.5 A VDS = -5 V, ID = -0.58 A IS = -0.3 A, VGS = 0 V -1.2 -0.5 0.42 0.64 1300 -0.9 -1.2 0.65 0.85 -20 -0.5 -0.7 -1.0 "5 -1 -10 A W mS V m mA V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Turn On Time Turn-Off Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = -6 V, RL = 10 W ID ^ -0.58 A VGEN = -4 5 V -0 58 A, -4.5 Rg = 6 W 1400 VDS = -6 V VGS =-4.5 V 6 V, 45 ID ^ -0.58 A 300 250 150 25 30 55 38 35 45 85 60 ns W 2200 p pC Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.0 VGS = 5 thru 3 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 1.6 25_C 1.2 2V 0.8 1.2 125_C 0.8 2.0 TJ = -55_C Transfer Characteristics 0.4 1.5 V 1V 0.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72692 S-40248--Rev. A, 16-Feb-04 TP0101K New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 3.0 r DS(on) - On-Resistance ( W ) 2.5 C - Capacitance (pF) 2.0 1.5 VGS = 2.5 V 1.0 VGS = 4.5 V 0.5 0.0 0.0 200 175 150 125 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4 8 12 16 20 Coss Crss Ciss Vishay Siliconix Capacitance ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 0.6 A 4 1.7 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance ( W) (Normalized) 1.5 VGS = 4.5 V ID = 0.6 A 1.3 3 2 1.1 1 0.9 0 0.0 0.3 0.6 0.9 1.2 1.5 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 4 1 I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 On-Resistance vs. Gate-to-Source Voltage ID = 0.6 A 0.1 TJ = 25_C 0.01 0.001 0.0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72692 S-40248--Rev. A, 16-Feb-04 www.vishay.com 3 TP0101K Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 0.2 0.1 0.0 -0.1 0.01 -0.2 -50 0.001 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 TJ - Temperature (_C) VGS - Gate-to-Source Voltage (V) ms 1 I GSS - Gate Current (mA) V GS(th) Variance (V) ID = 50 mA 100,000 10,000 1,000 100 10 1 0.1 TJ = 25_C TJ = 150_C Gate Current vs. Gate-Source Voltage Single Pulse Power, Junction-to-Ambient 5 10 Safe Operating Area rDS(on) Limited IDM Limited 4 1 I D - Drain Current (A) Power (W) 3 1 ms 10 ms 0.1 ID(on) Limited 100 ms 1s 10 s dc 2 1 0.01 TA = 25_C Single Pulse BVDSS Limited 0 0.01 0.001 0.1 1 Time (sec) 10 100 600 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72692 S-40248--Rev. A, 16-Feb-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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