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| SUP40N25-60 New Product Vishay Siliconix N-Channel 250-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 250 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 40 38.7 rDS(on) (W) 0.060 @ VGS = 10 V 0.064 @ VGS = 6 V Qg (Typ) 95 APPLICATIONS D Industrial TO-220AB D G GDS Top View Ordering Information: SUP40N25-60--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 250 "30 40 23 70 35 61 300b 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 73132 S-42076--Rev. A, 15-Nov-04 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 0.5 Unit _C/W 1 SUP40N25-60 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "30 V VDS = 250 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 250 V, VGS = 0 V, TJ = 125_C VDS = 250 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 6 V, ID = 15 A, Forward Transconductancea gfs VDS = 15 V, ID = 20 A 0.051 70 70 0.049 0.060 0.121 0.163 0.064 S W 250 2 4 "250 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 100 V, RL = 2.78 W ID ^ 45 A, VGEN = 10 V, Rg = 2.5 W f = 1 MHz VDS = 125 V, VGS = 10 V, ID = 45 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 5000 300 170 95 28 34 1.6 22 220 40 145 35 330 60 220 ns W 140 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/ms IF = 45 A, VGS = 0 V 1.0 150 12 0.9 45 70 1.5 225 18 2 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73132 S-42076--Rev. A, 15-Nov-04 SUP40N25-60 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 7 V 80 I D - Drain Current (A) I D - Drain Current (A) 6V 80 100 Vishay Siliconix Transfer Characteristics 60 60 40 40 TC = 125_C 20 25_C -55_C 0 1 2 3 4 5 6 20 5V 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 VGS - Gate-to-Source Voltage (V) Transconductance 150 TC = -55_C 25_C r DS(on) - On-Resistance ( W ) 120 g fs - Transconductance (S) 0.08 0.10 On-Resistance vs. Drain Current 90 125_C 0.06 VGS = 6 V VGS = 10 V 60 0.04 30 0.02 0 0 10 20 30 40 50 60 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) 7000 6000 C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 40 Crss Capacitance 20 VDS = 125 V ID = 45 A Gate Charge V GS - Gate-to-Source Voltage (V) Ciss 16 12 8 4 Coss 0 80 120 160 200 0 30 60 90 120 150 180 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) www.vishay.com Document Number: 73132 S-42076--Rev. A, 15-Nov-04 3 SUP40N25-60 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 20 A I S - Source Current (A) 2.8 2.4 rDS(on) - On-Resiistance (Normalized) 2.0 1.6 1.2 0.8 0.4 -50 Source-Drain Diode Forward Voltage 10 TJ = 150_C TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 100 Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 300 290 ID = 1.0 mA 280 270 260 250 240 230 -50 10 I Dav (a) IAV (A) @ TA = 25_C 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) V (BR)DSS (V) -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 73132 S-42076--Rev. A, 15-Nov-04 SUP40N25-60 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 50 100 Safe Operating Area, Case Temperature 10 ms *Limited by rDS(on) 100 ms 1 ms 40 I D - Drain Current (A) I D - Drain Current (A) 10 30 1 10 ms, 100 ms, dc 20 0.1 10 0.01 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.001 0.1 100 1 10 1000 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73132. Document Number: 73132 S-42076--Rev. A, 15-Nov-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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