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| STC1815 NPN Silicon Transistor STC1815 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 5 150 625 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistion frequency Collector output capacitance Noise figure (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob NF Test Condition IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10K Min. Typ. Max. 60 50 5 70 80 2 0.1 0.1 700 0.25 3.5 10 Unit V V V A A V MHz pF dB * : hFE rank / A : 70 ~ 140, B : 120 ~ 240, C : 200 ~ 400, D : 300 ~ 700 2 STC1815 Electrical Characteristic Curves Fig. 1 PC -Ta Fig. 2 IC -VBE Fig. 3 IC -VCE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC 3 |
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