 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated junction * Low reverse current * Soft recovery characteristics * Ultrafast reverse recovery time DO-214AC (SMA) * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF trr ER TJ max. 1.5 A 200 V to 600 V 30 A 1.0 A 1.4 V 75 ns 20 mJ 150 C TYPICAL APPLICATIONS For use in high frequency rectification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 C Operating junction and storage temperature range VRRM IF(AV) IFSM SYMBOL BYG20D BYG20D 200 BYG20G BYG20G 400 1.5 30 BYG20J BYG20J 600 V A A UNIT ER TJ, TSTG 20 - 55 to + 150 mJ C Document Number: 88958 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 BYG20D thru BYG20J Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum DC reverse current Maximum reverse recovery time Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TEST CONDITIONS at IF = 1 A IF = 1.5 A at VR = VRRM TJ = 25 C TJ = 25 C TJ = 100 C SYMBOL VF IR trr BYG20D BYG20G 1.3 1.4 1 10 75 BYG20J UNIT V A ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance - junction lead TL = const. Typical thermal resistance - junction ambient Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 m Cu SYMBOL RJL RJA BYG20D BYG20G 25 150 (1) 125 (2) 100 (3) BYG20J UNIT C/W C/W ORDERING INFORMATION (Example) PREFERRED P/N BYG20D-E3/TR BYG20D-E3/TR3 BYG20DHE3/TR (1) BYG20DHE3/TR3 (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PACKAGE CODE TR TR3 TR TR3 BASE QUANTITY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 1.6 1.4 1.2 1.0 0.8 RJA 125 K/W 0.6 0.4 0.2 0.001 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 RJA 150 K/W RJA 25 K/W VR = VRRM Half Sine-Wave TJ = 150 C Forward Current (A) 1 TJ = 25 C 0.1 0.01 Forward Voltage (V) Average Forward Current (A) Ambient Temperature (C) Figure 1. Forward Current vs. Forward Voltage Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88958 Revision: 27-Aug-07 BYG20D thru BYG20J Vishay General Semiconductor 100 VR = VRRM 600 IR = 0.5 A, iR = 0.125 A Reverse Recovery Time (ns) 500 Reverse Current (A) 400 TA = 125 C TA = 100 C 200 TA = 75 C TA = 50 C 100 TA = 25 C 10 300 1 25 50 75 100 125 150 0 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (C) Forward Current (A) Figure 3. Reverse Current vs. Junction Temperature Figure 6. Reverse Recovery Time vs. Forward Current 70 200 Reverse Power Dissipation (mW) 60 50 40 30 20 10 0 25 50 75 100 PR - Limit at 80 % VR Reverse Recovery Charge (nC) VR = VRRM IR = 0.5 A, iR = 0.125 A 150 TA = 125 C TA = 100 C 100 TA = 75 C 50 TA = 50 C TA = 25 C 0 PR - Limit at 100 % VR 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (C) Forward Current (A) Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature Figure 7. Reverse Recovery Charge vs. Forward Current Thermal Resistance for Pulse Cond. (K/W) 30 f = 1 MHz 25 1000 Diode Capacitance (pF) 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 101 102 20 15 10 5 0 0.1 1 10 100 Reverse Voltage (V) Pulse Length (s) Figure 5. Diode Capacitance vs. Reverse Voltage Figure 8. Thermal Response Document Number: 88958 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 BYG20D thru BYG20J Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88958 Revision: 27-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of BYG20D-E3TR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |