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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- BD306F 400V(Min)- BD307F *Collector Current-8A APPLICATIONS *Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BU306F VCBO Collector-Base Voltage BU307F BU306F VCEO Collector-Emitter Voltage BU307F VEBO IC ICM IB B VALUE 600 UNIT V 700 300 V 400 9 8 16 4 8 20 150 -65~150 V A A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 6.12 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BU306F IC= 0.1A ;IB= 0; L=25mH B BU306F/307F CONDITIONS MIN 300 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 400 BU307F VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICES IEBO hFE-1 hFE-2 hFE-3 COB fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product IC= 2A; IB= 0.4A B 1.0 1.5 2.0 3.0 1.2 1.6 1.5 1 5 1 15 8 6 80 4 50 40 30 V V V V V mA mA IC= 5A; IB= 1A IC= 5A; IB= 1A; TJ= 100 B B IC= 8A; IB= 2A B IC= 2A; IB= 0.4A B IC= 5A; IB= 1A IC= 5A; IB= 1A; TJ= 100 B B VCE= VCESmax;VBE= -1.5V VCE= VCESmax;VBE= -1.5V;TJ= 100 VEB= 9V; IC=0 IC= 0.5A ; VCE= 5V IC= 2A ; VCE= 5V IC= 5A ; VCE= 5V IE= 0 ; VCB= 10V IC= 0.5A ; VCE= 10V, ftest= 1.0MHz pF MHz Switching Times ; Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time 0.1 1.0 3.0 0.7 s s s s IC= 5A; IB1= -IB2= 1A; VCC= 125V; tp= 25s isc Websitewww.iscsemi.cn 2 |
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