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| SMD Type Silicon P-Channel MOS FET 2SJ130S Transistors IC Features Low on-resistance High speed switching Low drive current +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation (Tc=25 ) Channel temperature Storage temperature Symbol VDSS VGSS ID(DS) ID(pulse) IDR Pch Tch Tstg Rating -300 20 -1 -2 -1 20 150 -55 to +150 Unit V V A A A W 3.80 www.kexin.com.cn 1 SMD Type 2SJ130S Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static Drain to source on stateresistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Symbol Testconditons Transistors IC Min -300 20 Typ Max Unit V V V(BR)DSS ID = -10 mA, VGS = 0 V(BR)GSS IG = IGSS IDSS VGS = 100 A, VDS = 0 16 V, VDS = 0 10 -100 -2 6.0 0.25 0.4 235 65 16 -4 8.5 A A V VDS = -240 V, VGS = 0 VGS(off) ID = -1 mA, VDS = -10 V RDS(on) ID = -0.5 A, VGS = -10 V |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr IF = -1 A, VGS = 0 IF = -1 A, VGS = 0, diF/dt = 50 A/ s ID = -0.5 A, VGS = -10 V, RL = 60 U ID = -0.5 A, VDS = -20 V VDS = -10 V, VGS = 0, f = 1 MHz S pF pF pF ns ns ns ns V ns 10 25 35 45 -0.9 200 2 www.kexin.com.cn |
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