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| SMD Type High Voltage Switching Transistor 2SC5161 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High breakdown voltage.VCEO = 400V Fast switching.tr = 1.0is,IC = 0.8A NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current * Collector current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature * Single pulse pw=10ms Tj Tstg Symbol VCBO VCES VEBO ICP IC PC Rating 400 400 7 4 2 10 1 150 -55 to +150 Unit V V V A(Puse) A(DC) W 3.80 www.kexin.com.cn 1 SMD Type 2SC5161 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage collector-emitter breakdown voltage collector-emitter voltage Emitter-base breakdown voltage collecotr cutoff current Emitter cutoff current Collector to emitter saturation voltage Base to emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO VCEO(SUS) BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT cob ton tstg tf IC=50iA IC=1mA IC=1.0A,IB1=0.1A,L=1mH IE=50iA VCB=400V VEB=7V IC/IB=1A/0.2A IC/IB=1A/0.2A VCE=5V,IC=0.1A VCE=10V.IE=-0.1A.f=5MHz VCB=10V,IE=0A,f=1MHz IC=0.8A,RL=250U IB1=-IB2=0.08A VCC=200V 25 Testconditons Min 400 400 400 7 Transistors Typ Max Unit V V V V 10 10 1 1.5 50 10 30 1 2.5 1 iA iA V V MHz pF is is is hFE Classification ltem hFE B 25 to 50 2 www.kexin.com.cn |
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