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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 500 400 10 15 30 5 UNIT V V V A A A W ae ae Emitter-base voltage Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V ;IE=0 VEB=10V; IC=0 IC=8A ; VCE=4V IE=-1.5A ; VCE=12V f=1MHz ; VCB=10V 10 10 MIN 400 0.5 1.3 100 100 30 MHz pF |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB Switching times ton tstg tf IN Fall time Turn-on time Storage time CHA E SEM NG OND IC TOR UC 85 1.0 3.0 0.5 |I |I |I s s s IC=8A;IB1=0.8A; IB2=-1.6A;RL=25| VCC=200V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4139 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 CHA IN E SEM NG OND IC TOR UC 4 |
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