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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1881 DESCRIPTION *With TO-220C package *DARLINGTON *High DC current gain APPLICATIONS *High gain amplifier power switching PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 6 30 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat ICBO ICEO hFE-1 hFE-2 ton toff PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Turn-on time VCC=11V, IC=2A IB1=-IB2=8mA Turn-off time 5 CONDITIONS IC=50mA,RBE= IE=50mA, IC=0 IC=2.5A ,IB=20mA VCB=60V, IE=0 VCE=30V, ,RBE= IC=1.5A ; VCE=1.5V IC=2.5A ; VCE=1.5V 1000 500 1 MIN 60 7 2SC1881 TYP. MAX UNIT V V 1.2 0.2 0.4 V mA mA s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1881 Fig.2 Outline dimensions 3 |
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