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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1826 DESCRIPTION *With TO-220 package *Collector current :IC=4A *Collector power dissipation :PC=30W@TC=25 APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 6 4 30 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1826 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 60 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 80 V Emitter-base breakdown voltage 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V A A ICBO Collector cut-off current VCB=80V;IE=0 100 IEBO Emitter cut-off current VEB=6V; IC=0 100 hFE fT DC current gain IC=1A ; VCE=4V IC=0.5A ; VCE=12V 40 320 Transition frequency 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1826 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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