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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION *With TO-126 package *High power dissipation APPLICATIONS *Useful for high-voltage general purpose applications *Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION * Absolute Maximun Ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 4 0.1 20.8 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1163 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=100A;IE=0 IE=100A;IC=0 300 V Emitter-base breakdown voltage 4 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V A A ICBO Collector cut-off current VCB=200V; IE=0 10 IEBO Emitter cut-off current VEB=3V; IC=0 10 hFE DC current gain IC=50mA ; VCE=10V 30 240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1163 Fig.2 Outline dimensions 3 |
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