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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD434/436/438 DESCRIPTION With TO-126 package Complement to type BD433/435/437 APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD434 BD436 VCBO Collector-base voltage VCEO CHA IN Emitter -base voltage Collector current (DC) Collector-emitter voltage GE S N BD438 BD434 BD436 BD438 Open emitter EMIC OND TOR UC VALUE -22 -32 -45 -22 -32 -45 UNIT V Open base V VEBO IC ICM IB PC Tj Tstg Open collector -5 -4 -7 -1 V A A A W ae ae Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 36 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage BD434/436 IC=-2A; IB=-0.2A BD438 BD434/436 VBE Base-emitter on voltage BD438 BD434 VCEO(SUS) Collector-emitter sustaining voltage BD436 BD438 BD434 ICES Collector cut-off current BD436 BD438 VCB=-22V; IE=0 VCB=-32V; IE=0 VCB=-45V; IE=0 VCE=-22V; VBE=0 VCE=-32V; VBE=0 VCE=-45V; VBE=0 VEB=-5V; IC=0 IC=-0.1A; IB=0 IC=-2A ; VCE=-1V CONDITIONS SYMBOL BD434/436/438 MIN TYP. MAX -0.5 UNIT VCEsat -0.2 -0.6 -1.1 V V -1.2 -22 -32 -45 V -100 |I A ICES Collector cut-off current BD434 BD436 BD438 IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain HAN INC BD434/436 BD438 GE S IC=-10mA ; VCE=-5V 30 85 50 IC=-2A ; VCE=-1V 40 EMIC DUC ON 40 TOR -100 |I -1 130 A mA IC=-0.5A ; VCE=-1V 140 BD434/436 hFE-3 DC current gain BD438 fT Transition frequency IC=-250mA; VCE=-1V 3 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD434/436/438 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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