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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220F package Low saturation voltage. Excellent dependence of hFE on current. Fast switching speed. APPLICATIONS Car-use inductance drivers, lamp drivers. Inverters drivers, conveters (strobes, flashes, FLT lighting circuits). Power amplifiers High-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION 2SC3748 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IN Emitter PARAMETER Fig.1 simplified outline (TO-220F) and symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CHA E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 80 60 5 10 12 2 UNIT V V V A A Open emitter Open collector PC Collector dissipation TC=25ae 30 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA; IE=0 IC=1mA; RBE= IE=1mA; IC=0 IC=5A; IB=0.25A VCB=40V ;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 80 60 5 0.4 100 100 280 MHz |I |I TYP. MAX UNIT V V V V A A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT Switching times ton tstg tf Fall time Turn-on time CHA IN Storage time E SEM NG VCC=20V; IC=5A IB1=-IB2=0.25A RL=4| OND IC TOR UC 0.1 0.5 0.1 |I |I |I s s s hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3748 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3748 CHA IN E SEM NG OND IC TOR UC 4 |
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